مقال حول تقنية ترانزستورات الصفائح النانوية

Saehoon Joung and SoYoung Kim, “Design Optimization of Dual Material Gate Nano Sheet Field Effect Transistors “,Authorized licensed use limited to: Auckland University of Technology.

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Firas Natheer Abdul-kadir Agha, Yasir Hashim, Waheb Abduljabbar Shaif, “Temperature characteristics of Gate all around nanowire channel Si-TFET”, Journal of Physics: Conference Series, 2020. (Accepted)