Study the Effect of Temperature, Resistors, and Absorption Layer CNTS on Cell Performance Using SCAPS
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Abstract
The ZnO/CdS/CNTS solar cell was simulated using the SCAPS program. It was found that increasing the concentration of the accepter and the thickness of the absorber layer increased (ɳ, Voc) and decreased (FF). The best concentration was 1.0×12 cm-3, and the best thickness was (2.5µm). Increasing the lift time of minority carriers increased (ɳ, FF, Jsc) and decreased (Voc). Adding a back-reflection layer (BSF) increased the conversion efficiency from 14.07 % to 15.15%. The effect of increasing the acceptor concentration in the reflection layer was similar to the absorption layer; however, increasing the thickness was opposite to the absorption layer, meaning it increases (FF) and decreases (ɳ, Voc). The results showed that increasing the shunt resistance increased (ɳ, FF, Voc), while increasing the series resistance decreased (ɳ, FF, Voc), and increasing the temperature reduced (ɳ, Voc, Jsc) and increased (FF).
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